AP2305AGN

Pb Free Plating Product

Advanced Power Electronics Corp.

▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device

S

D

P-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

SOT-23

-30V80mΩ- 3.2A

Description

G

DThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,, low on-resistance and cost-effectiveness.

The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltageapplications such as DC/DC converters.

GSAbsolute Maximum Ratings

SymbolVDSVGS

ID@TA=25℃ID@TA=70℃IDM

PD@TA=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain Current3Continuous Drain Current3Pulsed Drain Current1,2Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

Rating- 30± 12-3.2-2.6-101.380.01-55 to 150-55 to 150

UnitsVVAAAW W/℃℃℃

Thermal Data

SymbolRthj-amb

Parameter

Thermal Resistance Junction-ambient3

Max.

Value90

Unit℃/W

Data and specifications subject to change without notice

200630062-1/4

AP2305AGN

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown Voltage

Test Conditions

VGS=0V, ID=-250uAVGS=-10V, ID=-3.2AVGS=-4.5V, ID=-3.0AVGS=-2.5V, ID=-2.0A

Min.-30-----0.5--------------

Typ.--0.1

Max.Units--6080150-1.2--1-25±10018------1325--VV/℃mΩmΩmΩVSuAuAnAnCnCnCnsnsnsnspFpFpF

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=-1mA

RDS(ON)

Static Drain-Source On-Resistance----9---101.83.6715211573510080

VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrss

Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=70oC)

VDS=VGS, ID=-250uAVDS=-5V, ID=-3.0AVDS=-30V, VGS=0VVDS=-24V, VGS=0VVGS=± 12VID=-3.2AVDS=-24VVGS=-4.5VVDS=-15VID=-3.2A

RG=3.3Ω,VGS=-10VRD=4.6ΩVGS=0VVDS=-25Vf=1.0MHz

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage2

Reverse Recovery TimeReverse Recovery Charge

Test Conditions

IS=-1.2A, VGS=0VIS=-3.2A, VGS=0V,dI/dt=100A/µs

Min.---

Typ.-2419

Max.Units-1.2--VnsnC

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.

2/4

AP2305AGN4036TA=25oC-ID , Drain Current (A)3032-5.0V28TA=150oC-5.0V-4.0V-ID , Drain Current (A)-4.0V2465mΩ-3.0V2020-3.0V161210VG= -2.0V8VG= -2.0V400123456789001234567-VDS , Drain-to-Source Voltage (V)-VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

3001.8ID= -1.0ATA=25oCRDS(ON) (mΩ)2001.6ID= -3.0AVGS= -4.5VNormalized RDS(ON)0246810121.41.210010.800.6-50050100150-VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (C)o Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

1.51001011-VGS(th) (V)0.50-50Tj=150C-IS(A)oTj=25Co0.10.0100.40.81.21.6050100150-VSD , Source-to-Drain Voltage (V)Tj, Junction Temperature ( oC) Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

3/4

AP2305AGN1210000f=1.0MHz10-VGS , Gate to Source Voltage (V)ID= -3.2AVDS= -24V8100065mΩCiss6C (pF)4100CossCrss20024681012101591317212529QG , Total Gate Charge (nC)-VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1001DUTY=0.5Normalized Thermal Response (Rthja)0.2100.10.1-ID (A)11ms0.05PDMt0.01TDuty factor = t/TPeak Tj = PDM x Rthja + Ta10ms0.10.01Single pulse100msTA=25CSingle PulseoRthja = 270℃/W1sDC101000.010.110.0010.00010.0010.010.11101001000-VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS90%VGQG-4.5VQGSQGD10%VGStd(on)trtd(off)tfChargeQ Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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