Methods and apparatus for sensing a memory cell

专利名称：Methods and apparatus for sensing a

memory cell

发明人：Andrea D'Alessandro,Violante Moschiano申请号：US14886536申请日：20151019公开号：US09299449B2公开日：20160329

专利附图：

摘要：Methods of operating a memory include selectively discharging a data linethrough a memory cell selected for sensing, discharging a sense node to the data linewhile a voltage level of the sense node is greater than a voltage level of the data line,

and inhibiting discharging of the data line to the sense node while the voltage level of thedata line is greater than the voltage level of the sense node. Sense circuits include a pathbetween an input node and a sense node facilitating current flow from the sense node tothe input node when a voltage level of the sense node is greater than a voltage level ofthe input node and inhibiting current flow from the input node to the sense node whenthe voltage level of the sense node is less than the voltage level of the input node.

申请人：MICRON TECHNOLOGY, INC.

地址：Boise ID US

国籍：US

代理机构：Dicke, Billig & Czaja, PLLC

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