专利名称：3D SEMICONDUCTOR DEVICE AND
STRUCTURE
发明人：Zvi Or-Bach,Brian Cronquist,Deepak C. Sekar申请号：US17140381申请日：20210104
公开号：US20210159109A1公开日：20210527
专利附图：
摘要：A 3D semiconductor device, the device including: a first level including a firstsingle crystal layer, the first level including first transistors, where the first transistorseach include a single crystal channel; first metal layers interconnecting at least the first
transistors; and a second level including a second single crystal layer, the second levelincluding second transistors, where the second level overlays the first level, where thesecond transistors are horizontally oriented and each include a High-k metal gate, wherethe second level is bonded to the first level, and where the bonded includes oxide tooxide bonds.
申请人：Monolithic 3D Inc.
地址：Klamath Falls OR US
国籍：US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容