System and method for semiconductor device fabrica

专利名称：System and method for semiconductor

device fabrication using modeling

发明人：Henning Haffner,Lars W. Liebmann,Donald

Samuels,Steven Scheer

申请号：US11390982申请日：20060327

公开号：US20070226674A1公开日：20070927

专利附图：

摘要：System and Method for Semiconductor Device Fabrication Using ModelingSystem and method for using adjustment patterns as well as physical parameters as

targets to control mask structure dimensions using optical proximity correction. Apreferred embodiment includes defining targets based on definition rules and adjustingmask layer structures based on the targets. The targets comprise structures that arevisible in the reproduced pattern as well as targets that affect geometric properties. Thetargets that affect geometric properties include target sacrificial structures that areselected from one or more of the following groups: actual sacrificial structures that arevisible only in an intermediate exposure of the reproduced pattern, virtual sacrificialstructures of a mask layer having at least one dimension smaller than a minimumdimension required for resolution, and virtual sacrificial structures not part of thereproduced pattern. Furthermore, targets that affect physical properties, such as lightintensity, can be defined and utilized in the adjusting.

申请人：Henning Haffner,Lars W. Liebmann,Donald Samuels,Steven Scheer

地址：Pawling NY US,Poughquag NY US,Silverthorne CO US,Austin TX US

国籍：US,US,US,US

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