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Memory device and method for erasing memory

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专利名称：Memory device and method for erasing

memory

发明人：Richard Fastow,Krishna Parat,Johnny

Javanifard

申请号：US11170950申请日：20050630公开号：US07187591B2公开日：20070306

专利附图：

摘要：A memory array includes a coupled controller for controlling the writing to,reading from and erasure of memory cells and blocks of memory cells within the

memory array. The controller is operable during an erase process to determine andreduce odd/even wordline offset. The controller operates on separately settableodd/even wordline erase voltages, which are adjusted to affect offset.

申请人：Richard Fastow,Krishna Parat,Johnny Javanifard

地址：Cupertino CA US,Palo Alto CA US,Carmichael CA US

国籍：US,US,US

代理机构：Marshall, Gerstein & Borun LLP

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