Memory device and memory system having programmabl

专利名称：Memory device and memory system having

programmable refresh methods

发明人：Yo-Sep Lee申请号：US13714331申请日：20121213公开号：US09030904B2公开日：20150512

专利附图：

摘要：A memory device includes a plurality of memory blocks, a setting circuitconfigured to set a first mode, in which a first number of memory blocks are refreshed ata time, and a second mode, in which a second number of memory blocks are refreshed at

a time, under control of a memory controller, the second number being smaller than thefirst number, a storage circuit configured to store additional refresh information, and arefresh control unit configured to control the second number of memory blocks to berefreshed at a time whenever a refresh command is applied when the additional refreshinformation is deactivated, and to control the first number of memory blocks to berefreshed at a time whenever the refresh command is applied when the additionalrefresh information is activated in a case in which the second mode is set by the settingcircuit.

申请人：SK Hynix Inc.

地址：Gyeonggi-do KR

国籍：KR

代理机构：IP & T Group LLP

更多信息请下载全文后查看