SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES CO

专利名称：SEMICONDUCTOR DEVICES INCLUDING

GATE STRUCTURES COMPRISING COLOSSALMAGNETOCAPACITIVE MATERIALS

发明人：Gurtej S. Sandhu申请号：US14037688申请日：20130926

公开号：US20140022011A1公开日：20140123

专利附图：

摘要：Semiconductor devices include a transistor having a gate structure located closeto a channel region that comprises a colossal magnetocapacitive material. The gate

structure is configured to affect electrical current flow through the channel regionbetween a source and a drain. The colossal magnetocapacitive material optionally may bedisposed between two structures, one or both of which may be electrically conductive,magnetic, or both electrically conductive and magnetic. Methods of fabricating

semiconductor devices include forming a colossal magnetocapacitive material close to achannel region between a source and a drain of a transistor, and configuring the colossalmagnetocapacitive material to exhibit colossal magnetocapacitance for generating anelectrical field in the channel region. Methods of affecting current flow through atransistor include causing a colossal magnetocapacitive material to exhibit colossalmagnetocapacitance and generate an electrical field in a channel region of a transistor.

申请人：Micron Technology, Inc.

地址：Boise ID US

国籍：US

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