Fin-like field effect transistor (FinFET) device a

专利名称：Fin-like field effect transistor (FinFET) device

and method of manufacturing same

发明人：Tsu-Hsiu Perng,Chih Chieh Yeh,Tzu-Chiang

Chen,Chia-Cheng Ho,Chih-Sheng Chang

申请号：US12837093申请日：20100715公开号：US08796759B2公开日：20140805

专利附图：

摘要：A FinFET device and method for fabricating a FinFET device is disclosed. Anexemplary FinFET device includes a semiconductor substrate; a fin structure disposed

over the semiconductor substrate; and a gate structure disposed on a portion of the finstructure. The gate structure traverses the fin structure and separates a source regionand a drain region of the fin structure, the source and drain region defining a channeltherebetween. The source and drain region of the fin structure include a strained sourceand drain feature. The strained source feature and the strained drain feature eachinclude: a first portion having a first width and a first depth; and a second portiondisposed below the first portion, the second portion having a second width and a seconddepth. The first width is greater than the second width, and the first depth is less thanthe second depth.

申请人：Tsu-Hsiu Perng,Chih Chieh Yeh,Tzu-Chiang Chen,Chia-Cheng Ho,Chih-ShengChang

地址：Hsin-Chu TW,Taipei TW,Hsinchu TW,Hsinchu TW,Hsinchu TW

国籍：TW,TW,TW,TW,TW

代理机构：Haynes and Boone, LLP

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