Fin-Like Field Effect Transistor (FinFET) Device A

专利名称：Fin-Like Field Effect Transistor (FinFET)

Device And Method Of Manufacturing Same

发明人：Chih-Hao Chang,Jeff J. Xu申请号：US14937529申请日：20151110

公开号：US20160064381A1公开日：20160303

专利附图：

摘要：A FinFET device and method for fabricating a FinFET device is disclosed. Anexemplary device includes a fin structure formed over a semiconductor substrate. The finstructure includes a source region and a drain region that include a first material layer

disposed over the semiconductor substrate, a second material layer disposed over thefirst material layer, and a third material layer disposed over the second material layer.The first, second, and third material layers are different from each other. The finstructure also has a channel defined between the source and drain regions. The channelincludes the first material layer disposed over the semiconductor substrate and thesecond semiconductor material layer disposed over the first material layer.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

更多信息请下载全文后查看